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| Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Features 0.70.2 Unit: mm 5.00.2 4.00.2 * Low collector-emitter saturation voltage VCE(sat) * High transition frequency fT 0.70.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SB0621 2SB0621A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating -30 -60 -25 -50 -5 -1 -1.5 750 150 -55 to +150 V A A mW C C V 1 23 Unit V 0.45+0.15 -0.1 2.5+0.6 -0.2 2.5+0.6 -0.2 0.45+0.15 -0.1 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0621 2SB0621A 2SB0621 2SB0621A VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -500 mA VCE = -5 V, IC = -1 A IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 85 50 - 0.2 - 0.85 200 20 30 - 0.4 -1.2 VCEO IC = -2 mA, IB = 0 Symbol VCBO Conditions IC = -10 A, IE = 0 Min -30 -60 -25 -50 -5 - 0.1 340 V A V V MHz pF V Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJC00044CED 2.30.2 Collector-emitter voltage 2SB0621 (Base open) 2SB0621A 12.90.5 5.10.2 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package 1 2SB0621, 2SB0621A PC Ta 1.0 -1.50 IC VCE Ta = 25C IB = -10 mA -1.2 VCE = -10 V Ta = 25C IC I B Collector power dissipation PC (W) 0.8 -1.25 -1.0 Collector current IC (A) -1.00 0.6 -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA - 0.75 0.4 - 0.50 0.2 - 0.25 0 0 40 80 120 160 0 Collector current IC (A) -9 mA -8 mA - 0.8 - 0.6 - 0.4 - 0.2 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 VBE(sat) IC -100 hFE IC 500 VCE = -10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 Forward current transfer ratio hFE -10 -10 400 25C -1 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C 25C -25C Ta = -25C 75C - 0.1 - 0.1 - 0.01 - 0.01 - 0.1 -1 -10 - 0.01 - 0.01 - 0.1 -1 -10 0 - 0.01 - 0.1 -1 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB = -10 V Ta = 25C 50 Cob VCB Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25C VCER RBE -120 IC = -10 mA Ta = 25C Transition frequency fT (MHz) 160 40 -100 -80 120 30 -60 2SB0621A 80 20 -40 2SB0621 -20 40 10 0 1 10 100 0 -1 -10 -100 0 0.1 1 10 100 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (k) 2 SJC00044CED 2SB0621, 2SB0621A ICEO Ta 104 VCE = -10 V -10 Safe operation area Single pulse Ta = 25C ICP Collector current IC (A) 103 -1 IC t=1s ICEO (Ta) ICEO (Ta = 25C) t = 10 ms 102 - 0.1 10 1 0 40 80 120 160 - 0.001 - 0.1 -1 -10 2SB0621A - 0.01 2SB0621 -100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) SJC00044CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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